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 Hyper TOPLED(R) Hyper-Bright, Hyper-Red TS GaAIAs-LED
LH T676
Besondere Merkmale
q Gehausebauform: P-LCC-2 q Gehausefarbe: wei q Doppel-Heterostruktur in GaAlAs Technologie, q q q q q q
transparentes Substrat (TS) besonders hohe Lichtstarke als optischer Indikator einsetzbar zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung fur alle SMT-Bestuck- und Lottechniken geeignet gegurtet (8-mm-Filmgurt) Storimpulsfest nach DIN 40839
Features
q q q q q q q q q
P-LCC-2 package color of package: white double heterojunction in GaAIAs technology, transparent substrate superior luminous intensity for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly and soldering methods available taped on reel (8 mm tape) load dump resistant acc. to DIN 40839 Emissions- Farbe der farbe Lichtaustrittsflache Color of Color of the Emission Light Emitting Area hyper-red colorless clear Lichtstarke Lichtstrom Bestellnummer
Typ
Type
Luminous Intensity IF = 20 mA IV (mcd) 25 40 63 100 40 ... ... ... ... ... 200 80 125 200 320
Luminous Flux IF = 20 mA V (mlm) 180 (typ.) 300 (typ.) 450 (typ.) -
Ordering Code
LH T676-NR LH T676-P LH T676-Q LH T676-R LH T676-PS
Q62703-Q3140 Q62703-Q3164 Q62703-Q3141 Q62703-Q3142 Q62703-Q3143
Streuung der Lichtstarke in einer Verpackungseinheit IV max / IV min 2.0. Luminous intensity ratio in one packaging unit IV max / IV min 2.0.
Semiconductor Group
1
11.96
VPL06724
LH T676
Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspannung Reverse voltage Verlustleistung Power dissipation TA 25 C Symbol Symbol Werte Values - 55 ... + 100 - 55 ... + 100 + 100 50 0.5 Einheit Unit C C C mA A
Top Tstg Tj IF IFM
VR Ptot
3 130
V mW
Warmewiderstand Rth JA Thermal resistance Sperrschicht / Luft Junction / air Montage auf PC-Board*) (Padgroe 16 mm2) mounted on PC-Board*) (pad size 16 mm2)
*) PC-board: FR4
450
K/W
Semiconductor Group
2
LH T676
Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 10 mA Dominantwellenlange Dominant wavelength IF = 10 mA Spektrale Bandbreite bei 50 % Irel max Spectral bandwidth at 50 % Irel max IF = 10 mA Abstrahlwinkel bei 50 % IV (Vollwinkel) Viewing angle at 50 % IV Durchlaspannung Forward voltage IF = 20 mA Sperrstrom Reverse current VR = 3 V Kapazitat Capacitance VR = 0 V, f = 1 MHz Schaltzeiten: Switching times: IV from 10 % to 90 % IV from 90 % to 10 % IF = 100 mA, tP = 10 s, RL = 50 Temperaturkoeffizient von IV bzw. V, IF = 20 mA Temperature coefficient of IV or V, IF = 20 mA Temperaturkoeffizient von VF, IF = 20 mA Temperature coefficient of VF, IF = 20 mA Temperaturkoeffizient von peak, IF = 20 mA Temperature coefficient of peak, IF = 20 mA Symbol Symbol (typ.) peak (typ.) (typ.) dom (typ.) (typ.) (typ.) 2 (typ.) VF (max.) VF (typ.) IR (max.) IR (typ.) C0 Werte Values 660 Einheit Unit nm
645
nm
22
nm
120 1.85 2.3 0.01 10 30
Grad deg. V V A A pF
(typ.) tr (typ.) tf TCI (typ.) (typ.) (typ.) TCV (typ.) (typ.) TC (typ.)
100 100 - 0.4
ns ns %/K
-3 + 0.16
mV/K nm/K
Semiconductor Group
3
LH T676
Relative spektrale Emission Irel = f (), TA = 25 C, IF = 10 mA Relative spectral emission V () = spektrale Augenempfindlichkeit Standard eye response curve
Abstrahlcharakteristik Irel = f () Radiation characteristic
Semiconductor Group
4
LH T676
Durchlastrom IF = f (VF) Forward current TA = 25 C
Relative Lichtstarke IV/IV(20 mA) = f (IF) Relative luminous intensity TA = 25 C
Zulassige Impulsbelastbarkeit IF = f (tP) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 C
Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA)
Semiconductor Group
5
LH T676
Mazeichnung Package Outlines
(Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified)
Kathodenkennzeichnung: Cathode mark:
abgeschragte Ecke bevelled edge
Semiconductor Group
6
GPL06724


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